Samsung has developed the world's first 900-layer 3D NAND flash memory prototype. The company achieved this milestone by stacking two 450-layer chips vertically to bypass single-stack limitations.
Company stacks two 450-layer chips vertically to bypass limitations
The prototype utilizes Cell Multi-Base (CMB) technology for its core structure. Samsung also implemented proprietary Top-Chip technology to address wafer warping during high-layer stacking. A new overlay correction technique controls bonding alignment errors at the nanometer scale to ensure yield rates.
Simultaneous optimization of bit line and word line structures allows the chip to increase storage density while reducing power consumption and physical size. Samsung designed this 900-layer memory for AI servers, data center SSDs, and high-performance mobile storage applications.
The company has only verified operational characteristics for the prototype's memory cells at this stage. This limited validation status means the technology is not yet ready for full production. The development may significantly widen the competitive gap between Samsung and SK Hynix in the storage market.
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