Samsung is shifting the timeline for its most advanced memory technology, pushing mass production of hybrid bonding HBM to 2029 and 2030. This delay matters because it aligns the memory supply with NVIDIA's upcoming Feynman AI GPUs. Buyers waiting for the next generation of high-performance AI infrastructure need to adjust their expectations for hardware availability.

Samsung shifts HBM4E mass production to 2029 to sync with NVIDIA Feynman GPUs
The company is investing in the necessary infrastructure to support this new memory architecture. Samsung is acquiring 50 hybrid bonding machines from the Dutch firm BE Semiconductor. These units will be installed at the company's Pyeongtaek facilities in South Korea. The installation work is expected to begin by the end of the current year.
- Manufacturing Technology: Hybrid Bonding
- Target Production Start: 2029-2030
- Equipment Acquisition: 50 hybrid bonding machines from BE Semiconductor
- Facility: Pyeongtaek
- Target GPU: NVIDIA Feynman
Hybrid bonding technology fundamentally changes how memory layers are connected. The process removes micro bumps to reduce the spacing between layers. This tighter integration improves performance and efficiency for high-bandwidth applications. The technology is specifically designed to support the HBM4E and HBM5 standards.
Samsung is also exploring alternative supply chains for its equipment needs. Industry sources suggest the company may procure machinery from local Korean manufacturers. This move could reduce reliance on foreign suppliers for critical production tools. The company is currently evaluating these domestic options alongside its international orders.
The production schedule remains subject to change based on technical readiness. Korean industry sources indicate that the 2029 start date is a target rather than a fixed commitment. Samsung will continue to refine the hybrid bonding process before full-scale manufacturing begins. The final timeline will depend on successful pilot runs at the Pyeongtaek site.



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