Samsung 10a DRAM Announced with 4F Square Architecture for 2028 Launch

Samsung announced its 10a DRAM on April 25, 2024. Samsung The company plans to begin mass production of this memory module in 2028. This new generation of DRAM utilizes a 4F Square unit structure to improve density. Samsung aims to increase unit density by 30% to 50% compared to its previous 6F Square design. The company reports this improvement based on data from The Elec.

The 10a DRAM relies on Vertical Channel Transistor technology for its core architecture. Samsung uses an Indium Gallium Zinc Oxide channel material to replace traditional silicon. The process node measures approximately 9.5 to 9.7 nanometers in actual circuit line width. Samsung is currently evaluating Molybdenum as a replacement for Titanium Nitride in the word line. The manufacturer notes that Molybdenum requires gas delivery system modifications due to its corrosive nature.

Samsung targets the global market for the initial release of this memory technology. The company has not yet disclosed specific pricing details for customers. The product utilizes IGZO (Indium Gallium Zinc Oxide) as its channel material. The evaluation of Molybdenum word lines remains a critical technical hurdle for the manufacturer.

Samsung 10a DRAM uses 4F Square structure and IGZO channels for 2028 launch

The 10a DRAM represents a structural evolution in high-density memory design. The product utilizes the 4F Square architecture. The product is planned for global availability in 2028. The company will need to resolve the Molybdenum processing challenges to finalize the design.