Samsung plans to begin mass production of its next-generation 1d DRAM chips by late 2027. The company aims to finalize manufacturing details before that deadline. This timeline positions the memory technology for integration into advanced artificial intelligence systems.
Samsung targets late 2027 for mass production of next-generation 1d DRAM chips to support advanced AI systems.
The 1d node represents a shift in how Samsung structures its dynamic random access memory architectures. Engineers designed this process to stack capacitors vertically rather than placing them side by side on a flat plane. The architecture mirrors Micron's 1-delta technology while introducing distinct manufacturing steps for the new capacitor layout.
Samsung intends to install specialized production equipment during the second quarter of 2027. Factory lines will then transition from testing to full-scale fabrication in the second half of that year. Industry sources indicate Samsung expects to lock these mass production schedules by December 2026.
The upgraded memory chips will likely support next-generation HBM5E modules designed for AI workloads. This update builds on current high-bandwidth memory standards used in data centers and accelerated computing platforms.
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