SanDisk and Kioxia Improve QLC 3D NAND Reliability with MANOSON Structure

SanDisk and Kioxia researchers won the Best Paper Award at IMW 2026 for a study on improving QLC 3D NAND reliability. The joint research team developed a novel channel backside engineering technique to address data retention issues in QLC cells. They introduced an oxide/nitride layer between the polysilicon and core insulating film, naming the structure MANOSON.

Joint research team wins Best Paper Award at IMW 2026 conference for data retention breakthrough in flash memory cells.

This modification reduces threshold voltage variation after repeated program/erase cycles, particularly in lower word line layers where tunneling oxide is thinner. Compared to conventional MANOS cells, the new design improves read margin by 15% after a 10,000-hour retention period or extends data storage life up to five times.

The technology targets QLC 3D NAND flash memory, which stores four bits per cell but historically struggles with long-term data retention. The researchers focused on the lower word line layers in 3D structures where tunneling oxide is thinner and more susceptible to degradation over time. Their engineering approach directly addresses these physical limitations without requiring a complete redesign of existing manufacturing processes.

Industry analysts note that improving QLC reliability could accelerate adoption in high-capacity consumer storage drives and enterprise SSDs. The fivefold extension in data storage life represents a significant step toward making QLC viable for longer-term archival applications.