KEYMOS released the Han Guang Yue Ying DDR5 memory module on May 22, 2024. The product targets high-performance computing and gaming platforms in China. It features a low-profile aluminum heatsink with a unique manufacturing technique.
Low-profile aluminum heatsink with industry-first exposed development process manufacturing technique
The memory uses selected Hynix A-die chips and supports both AMD EXPO and Intel XMP 3.0 overclocking profiles. The module includes a 10-layer PCB for improved signal integrity. It offers two speed configurations: 6000MT/s CL28 for AMD systems and 8000MT/s for Intel platforms.
Performance benchmarks show read speeds up to 58410MB/s and write speeds up to 80531MB/s on an AMD Ryzen 9 9950X3D system. The same platform recorded a latency of 75.8ns. On an Intel Core Ultra 9 285K setup, the module achieved read speeds of 101.78GB/s and write speeds of 95330MB/s with 79.6ns latency.
The heatsink measures 37mm in height and uses 1.5mm thick aluminum. KEYMOS applied an exposure and development process to the heatsink for custom graphics. This manufacturing method marks an industry first for memory modules.
KEYMOS made the Han Guang Yue Ying DDR5 available in China starting May 22, 2024. The company has not confirmed pricing details or international distribution plans.
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