SK Hynix announced its HBM4E memory product on April 23, 2024. The company plans to supply samples of the new memory in the second half of 2026. Mass production of the component is scheduled for 2027.
The HBM4E memory utilizes a 1c nm process technology for its DRAM bare chips. SK Hynix also highlighted its V9 NAND flash technology for this product line. The flash memory features a 321-layer structure.
SK Hynix executives stated that memory demand will increase as AI services become more widespread. They noted that the diversification of AI services will drive further stratification of storage semiconductors. The transition from 176-layer V7 to 321-layer V9 NAND aims to significantly improve production efficiency.
SK Hynix plans global sample supply for HBM4E in 2026, targeting 2027 mass production
The company confirmed that it currently has no other plans for wafer fab construction or acquisition. Future development and manufacturing outcomes for the 2027 mass production target remain inherently uncertain.
SK Hynix is advancing HBM4E development to meet the 2027 mass production goal. The company will continue to supply samples globally starting in the second half of 2026.
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