World’s First Mass-Produced Silicon GaN RF Chip Hits 5 Million Deliveries

A silicon-based gallium nitride radio frequency chip designed for smart terminals has passed a major commercial milestone. The device exceeded cumulative deliveries of 5 million units globally.

China Electronics Technology Group Corporation and Nanjing Guobo Electronics Co. Ltd celebrate commercial milestone for smart terminal hardware supporting sixth-generation wireless standards.

The chip was developed by the China Electronics Technology Group Corporation 55th Institute alongside Nanjing Guobo Electronics Co., Ltd. Engineers created the component to support national strategic infrastructure goals and address specific communication needs.

Designers built the silicon-based gallium nitride architecture for space-air-ground integrated information networks. The hardware supports research into sixth-generation wireless standards, commercial aerospace operations, low-altitude economy applications, and emergency communications systems.

The chip features high power output, high efficiency, ultra-wide bandwidth, and high reliability. These characteristics meet strict requirements for radio frequency power amplifier chips used in modern terminal devices.

This development marks a significant step toward large-scale commercialization of advanced gallium nitride technology in the Chinese semiconductor sector. This achievement highlights the expanding capacity of Chinese manufacturers to produce advanced semiconductor materials for future communication networks.