Samsung Unveils World’s First 5nm MRAM at IEEE VLSI Symposium

Samsung unveiled the world's first 5nm MRAM technology at the 2026 IEEE VLSI Symposium on June 18. This breakthrough introduces a new class of non-volatile memory that retains data without power while consuming significantly less energy than traditional DRAM. The development marks a shift toward more efficient storage solutions for demanding hardware applications.

Samsung unveils world's first 5nm MRAM technology at the 2026 IEEE VLSI Symposium

The company showcased the 5nm MRAM chip as a direct evolution from its earlier 8nm MRAM demonstration. This progression follows a recent tape-out of an edge AI chip in May, highlighting Samsung's continued focus on advanced memory architectures. The new chip integrates magnetoresistive random-access memory technology to bridge the gap between speed and persistence.

Specifications

• Technology: MRAM (Magnetoresistive Random-Access Memory)
• Process Node: 5nm
• Operating Temperature: -40°C to +150°C
• Automotive Standard: AEC-Q100
• Key Feature: Non-volatile, low power

Engineers designed the 5nm MRAM to operate reliably within a wide temperature range of -40°C to +150°C. The chip also meets the AEC-Q100 automotive grade standard, making it suitable for harsh environments. These specifications ensure stability for critical systems in vehicles and industrial equipment where thermal fluctuations are common.

Performance reports indicate that MRAM offers significant advantages over DRAM in operating speed, lifespan, and mass production feasibility. Samsung aims to bring this 5nm MRAM to mass production in 2027. The timeline allows for further refinement of the manufacturing process before widespread commercial deployment.