Micron has started sampling its new 256GB DDR5-9200 RDIMM memory modules for servers. The modules are designed for AI infrastructure, hyperscale data centers, and high-performance computing deployments.
Sampling with select ecosystem partners
The 256GB RDIMM uses Micron's 1-gamma DRAM technology and 3D stacked DRAM dies with through-silicon vias (TSV). It operates at a speed of 9200 MT/s. According to Micron, a single 256GB module reduces power consumption by over 40 percent compared to using two separate 128GB modules.
Specifications
- Capacity: 256 GB
- Speed: 9200 MT/s
- DRAM Technology: 1-gamma DRAM
- Packaging: 3D stacked DRAM dies with TSV
Sampling is currently underway with select ecosystem partners. Micron has not disclosed a timeline for broad production.
The new memory targets workloads that require high capacity and bandwidth, such as AI training and inference. By offering a single 256GB module, Micron aims to simplify server design and reduce energy costs for large-scale deployments.



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