SK Hynix Y1 DRAM Trial Production Moves to February

SK Hynix has moved up the trial production date for its massive Y1 semiconductor cluster in Yongin to February of next year. This acceleration matters because it signals a tighter supply window for the high-bandwidth memory chips that power modern AI workloads. Buyers and system integrators should watch this timeline closely as it affects when next-generation server memory becomes available.

Yongin facility accelerates 1c DRAM manufacturing for AI workloads

The facility is designed to manufacture 1c DRAM, which is the sixth generation of SK Hynix's 10nm-class memory technology. This specific process node targets high-performance memory modules including AI DDR, LPDDR, and the upcoming HBM4E standard. The shift to this advanced node is critical for meeting the bandwidth demands of large language models and other AI applications.

Y1 Cluster Specifications

• Product Technology: 1c DRAM (6th Gen 10nm-class)
• Target Applications: AI DDR/LPDDR, HBM4E
• Monthly Capacity: 20,000 wafers
• Total Investment: 600 trillion KRW (approx. 3.2 trillion RMB)
• Facility Structure: 4 factories, Phase 1 has 2 skeletons and 6 cleanrooms

SK Hynix plans to install formal equipment at the site during March and April of next year. The total investment for the four-factory cluster stands at 600 trillion KRW, which translates to approximately 3.2 trillion RMB. The first phase of construction includes two skeleton buildings and six cleanrooms to support the initial production run.

The facility aims to reach a monthly production capacity of 20,000 wafers once fully operational. While the original plan targeted a 2045 completion date, SK Hynix has accelerated the full cluster completion to 2033. We looked at AMD Versal Premium Gen 2 MoP earlier while tracking SK Hynix launches to understand the broader memory landscape.

SK Hynix confirmed the revised February trial production schedule and the accelerated 2033 completion target for the Yongin site. The company remains focused on scaling 1c DRAM output to support the growing demand for AI-specific memory solutions.