NEO Semiconductor Unveils 3D X-DRAM with 10x DRAM Density

NEO Semiconductor announced a new memory technology called 3D X-DRAM in 2023. The company claims the design achieves a density ten times higher than existing DRAM. This architecture uses a monolithic structure on a single die rather than stacking multiple dies. The design incorporates IGZO channel technology to manage data pathways.

The 3D X-DRAM cell structure includes 1T1C, 3T0C, and 1T0C configurations. The technology supports data retention times of up to 450 seconds. Read and write operations complete in 10 nanoseconds. These specifications aim to reduce refresh power requirements significantly compared to standard memory modules.

NEO Semiconductor positions 3D X-DRAM as a potential replacement for HBM in high-performance computing. The company states the memory suits AI workloads and in-memory computing applications. The announcement highlights the goal of creating a high-speed memory design with superior density.

New monolithic memory design targets AI workloads and HBM replacement

Both the 3D X-DRAM architecture and the related monolithic DRAM design remain in the invention verification stage. Neither architecture has reached commercialization yet. The technology currently exists as a development concept rather than a market-ready product.

Source: wccftech.com