SK Hynix DRAM Capacity Essentially Zero Despite High-NA EUV Tech

SK Hynix is facing severe constraints in its DRAM and HBM production capabilities. The company reports that available production capacity is essentially zero at this time. This shortage prevents the manufacturer from dedicating any portion of its output to specific customers. Industry observers note that DRAM makers are currently meeting only 60 to 70 percent of annual demand.

New facility spans area equivalent to 32 soccer fields

To address future needs, SK Hynix is constructing the P&T7 Mega-Fab. This new facility spans an area equivalent to 32 soccer fields. The site will utilize High-NA EUV technologies for manufacturing next-generation DRAM. The mega-fab is scheduled to be ready for operation by 2028.

Tech firms have proposed various investment offers to expand SK Hynix's memory output. These proposals include funding dedicated memory production lines. The chipmaker remains cautious about accepting these financial commitments. Management fears such deals could lock the company into supplying chips at lower prices to secure stable revenue.

SK Hynix has integrated High-NA EUV technology for next-gen DRAM production. This technical advancement places the vendor ahead of competitors Samsung and Micron. Memory shortages are expected to persist, with some industry players predicting worse conditions in 2027. The current supply constraints create significant limitations in accommodating all customer requests.